Part Number | FQH90N10V2 |
Distributor | Stock | Price | Buy |
---|
Part Number | FQH90N10V2 |
Manufacturer | Fairchild Semiconductor |
Title | MOSFET |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i. |
Features |
• 105A, 100V, RDS(on) = 10mΩ @VGS = 10 V • Low gate charge ( typical 147 nC) • Low Crss ( typical 300 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating October 2005 QFET ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This adv. |
similar datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FQH90N15 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
2 | FQH140N10 |
Fairchild Semiconductor |
100V N-Channel MOSFET | |
3 | FQH18N50V2 |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
4 | FQH35N40 |
Fairchild Semiconductor |
MOSFET | |
5 | FQH44N10 |
Fairchild Semiconductor |
MOSFET | |
6 | FQH44N10 |
ON Semiconductor |
N-Channel QFET MOSFET | |
7 | FQH44N10_F133 |
Fairchild Semiconductor |
MOSFET | |
8 | FQH70N10 |
Fairchild Semiconductor |
MOSFET | |
9 | FQH8N100C |
Fairchild Semiconductor |
MOSFET | |
10 | FQ08E |
Renesas Technology |
Gate Control Module |