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FQH90N10V2 |
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| Part Number | FQH90N10V2 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• 105A, 100V, RDS(on) = 10mΩ @VGS = 10 V • Low gate charge ( typical 147 nC) • Low Crss ( typical 300 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suit... |
| Document |
 FQH90N10V2 Data Sheet
PDF 0.99MB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | FQH90N10V2 |
Fairchild Semiconductor |
MOSFET |
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| 2 | FQH90N15 |
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| 3 | FQH140N10 |
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| 4 | FQH18N50V2 |
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| 5 | FQH35N40 |
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| 6 | FQH44N10 |
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Desde 2024. D4U Semiconductor.
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