FQH44N10_F133 |
Part Number | FQH44N10_F133 |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
Features |
• 48A, 100V, RDS(on) = 0.039Ω @VGS = 10 V • Low gate charge ( typical 48 nC) • Low Crss ( typical 85 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating D G GD S TO-247 FQH Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-S... |
Document |
FQH44N10_F133 Data Sheet
PDF 910.33KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FQH44N10 |
Fairchild Semiconductor |
MOSFET | |
2 | FQH44N10 |
ON Semiconductor |
N-Channel QFET MOSFET | |
3 | FQH140N10 |
Fairchild Semiconductor |
100V N-Channel MOSFET | |
4 | FQH18N50V2 |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
5 | FQH35N40 |
Fairchild Semiconductor |
MOSFET | |
6 | FQH70N10 |
Fairchild Semiconductor |
MOSFET |