Fairchild Semiconductor 2N4 Hoja de datos

No.	parte #	Fabricante	Descripción
1	2N4124	Fairchild Semiconductor	NPN General Purpose Amplifier racteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N4124 625 5.0 83.3 200 Max *MMBT4124 350 2.8
2	2N4125	Fairchild Semiconductor	PNP General Purpose Amplifier eristic Total Device Dissipation Derate above 25° C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N4125 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W © 1997 Fairchild Semiconductor Corporation 2N4125 PNP General P
3	2N4401	Fairchild Semiconductor	NPN General Purpose Amplifier ot recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parame
4	2N4123	Fairchild Semiconductor	NPN Amplifier PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N4123 625 5.0 83.3 200 Units mW mW/ °C °C/W °C/W © 1997 Fa
5	2N4126	Fairchild Semiconductor	PNP General Purpose Amplifier aracteristics Symbol PD RθJC RθJA TA= 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25° C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N4126 625 5.0 83.3 200 Max *MMBT4126 350 2.8
6	2N4400	Fairchild Semiconductor	NPN General Purpose Amplifier 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N4400 625 5.0 83.3 200 Max *MMBT4400 350 2.8 357 Units mW mW/ °C °C/W °C/W © 1997
7	2N4401BU	Fairchild Semiconductor	NPN General Purpose Amplifier ot recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parame
8	2N4403	Fairchild Semiconductor	PNP Amplifier
9	2N4410	Fairchild Semiconductor	NPN General Purpose Amplifier Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N4410 625 5.0 83.3 200 Units mW mW/ °C °C/W °C/W © 1997 Fairchild Semiconductor Corporation 2N4410 NPN General Purpose
10	FQD2N40	Fairchild Semiconductor	400V N-Channel MOSFET 0+6,71 0+%((71 9 &(( %& ( -8 ,: ±2( ) ' ' ' ) = ' = )5 @ @ @57 7 7 ; ) 9
11	FQPF2N40	Fairchild Semiconductor	400V N-Channel MOSFET 0+%((71 9 '(( %% (8 '' ±2( ) & & & ) < & < )5 ? ?57 7 7 : ) 9&! ; &! *
12	MTP2N40	Fairchild Semiconductor	(MTP2N35 / MTP2N40) N-Channel Power MOSFETs
13	MTP2N45	Fairchild Semiconductor	N-Channel MOSFET
14	2N4402	Fairchild Semiconductor	PNP Amplifier nce, Junction to Ambient Max 2N4402 625 5.0 83.3 200 Units V V V mA °C Units mW mW/°C °C/W °C/W © 2001 Fairchild Semiconductor Corporation 2N4402, Rev A 2N4402 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Param
15	2N4953	Fairchild Semiconductor	NPN General Purpose Amplifier Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N4953 625 5.0 83.3 200 Units mW mW/ °C °C/W °C/W © 1997 Fairchild Semiconductor Corporation 2N4953 NPN General Purpose
16	FQP2N40	Fairchild Semiconductor	400V N-Channel MOSFET ,%))71 8 ()) %& % %( 96 ±2) * ' ' ' * < ' < 5 > >57 7 7 : 8'! ; '! +!'! ;
17	FQU2N40	Fairchild Semiconductor	400V N-Channel MOSFET 0+6,71 0+%((71 9 &(( %& ( -8 ,: ±2( ) ' ' ' ) = ' = )5 @ @ @57 7 7 ; ) 9
18	FGD2N40L	Fairchild Semiconductor	400V N-Channel Logic Level IGBT VCE(SAT) = 1.6V @ IC = 2.5A, VGE = 2.4V 6kV ESD Protected High Peak Current Density TO-252 (D-Pak) Low VGE(TH) General Description This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for small engine i