| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild |
P-Channel MOSFET -2.5A, -60V. RDS(ON) = 0.3Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ________________________________________________________________________ |
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Fairchild |
N-Channel MOSFET 2.7A, 60V. RDS(ON) = 0.2Ω @ VGS = 10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ___________________________________________________________________________ |
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Fairchild |
N-Channel MOSFET 4 A, 60 V. RDS(ON) = 0.100 Ω @ VGS = 10 V, RDS(ON) = 0.120 Ω @ VGS = 4.5 V. Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2V. High density cell design for extremely low RDS(ON). High power and current handling capab |
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Fairchild |
N-Channel MOSFET 2.8 A, 60 V. RDS(ON) = 0.2 Ω @ VGS = 4.5 V RDS(ON) = 0.16 Ω @ VGS = 10 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ________________________________________ |
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Fairchild |
N-Channel MOSFET 5.5A, 30V. RDS(ON) = 0.05Ω @ VGS = 10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. __________________________________________________________________________ |
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Fairchild |
N-Channel MOSFET 7.2A, 30V. RDS(ON) = 0.035Ω @ VGS = 10V RDS(ON) = 0.05Ω @ VGS = 4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ____________________________________________ |
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Fairchild |
N-Channel MOSFET 5.5A, 30V. RDS(ON) = 0.05Ω @ VGS = 10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. __________________________________________________________________________ |
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Fairchild |
P-Channel Enhancement Mode Field Effect Transistor -3A, -30V. RDS(ON) = 0.18Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. _________________________________________________________________________ |
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Fairchild |
P-Channel Enhancement Mode Field Effect Transistor -5.9A, -30V. RDS(ON) = 0.05Ω @ VGS = -10V RDS(ON) = 0.07Ω @ VGS = -6V RDS(ON) = 0.09Ω @ VGS = -4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. _____________ |
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Fairchild |
N-Channel Enhancement Mode Field Effect Transistor 11.5 A, 30 V. RDS(ON) = 0.015 Ω @ VGS = 10 V RDS(ON) = 0.02 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. _____________________________________ |
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Fairchild |
N-Channel MOSFET 4 A, 60 V. RDS(ON) = 0.100 Ω @ VGS = 10 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D |
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Fairchild |
N-Channel MOSFET 2.1A 100V. RDS(ON) = 0.25Ω @ VGS = 5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ___________________________________________________________________________ |
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Fairchild |
P-Channel MOSFET -5A, -30V. RDS(ON) = 0.065Ω @ VGS = -10V RDS(ON) = 0.1Ω @ VGS = -4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ___________________________________________ |
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Fairchild |
N-Channel Enhancement Mode Field Effect Transistor 8A, 30V. RDS(ON) = 0.028Ω @ VGS = 10V. RDS(ON) = 0.042Ω @ VGS = 4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ____________________________________________ |
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Fairchild |
P-Channel Enhancement Mode Field Effect Transistor -7.5 A, -30 V. RDS(ON) = 0.030 Ω @ VGS = -10 V RDS(ON) = 0.045 Ω @ VGS = -4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. _________________________________ |
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Desde 2024. D4U Semiconductor.
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