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NDT451N |
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| Part Number | NDT451N |
| Manufacturer | Fairchild |
| Description | Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailore... |
| Features |
5.5A, 30V. RDS(ON) = 0.05Ω @ VGS = 10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package.
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Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation
T A = 25°C unless otherwise noted
NDT451N 30 ±20
(Note 1a)
Units V V A
±5.5 ±25
(Note 1a) (Note 1b) (Note 1c)
3 1.3 1.1 -65 to ... |
| Document |
 NDT451N Data Sheet
PDF 226.48KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NDT451 |
Fairchild |
N-Channel MOSFET |
|
| 2 | NDT451AN |
Fairchild |
N-Channel MOSFET |
|
| 3 | NDT452AP |
Fairchild |
P-Channel MOSFET |
|
| 4 | NDT452P |
Fairchild |
P-Channel Enhancement Mode Field Effect Transistor |
|
| 5 | NDT453N |
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
|
| 6 | NDT454P |
Fairchild |
P-Channel Enhancement Mode Field Effect Transistor |
|
| 7 | NDT455N |
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
|
| 8 | NDT456P |
Fairchild |
P-Channel Enhancement Mode Field Effect Transistor |
|
| 9 | NDT410EL |
Fairchild |
N-Channel MOSFET |
|
| 10 | NDT014 |
VBsemi |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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