| Description | Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are part... |
| Features | -5A, -30V. RDS(ON) = 0.065Ω @ VGS = -10V RDS(ON) = 0.1Ω @ VGS = -4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ________________________________________________________________________________ D D G D S G S Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Vo... |
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Fairchild |
P-Channel Enhancement Mode Field Effect Transistor |
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Fairchild |
N-Channel MOSFET |
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Fairchild |
N-Channel MOSFET |
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Fairchild |
N-Channel MOSFET |
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Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
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Fairchild |
P-Channel Enhancement Mode Field Effect Transistor |
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Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
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Fairchild |
P-Channel Enhancement Mode Field Effect Transistor |
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Fairchild |
N-Channel MOSFET |
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VBsemi |
N-Channel MOSFET |
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Desde 2024. D4U Semiconductor.
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