NDT452P |
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| Part Number | NDT452P |
| Manufacturer | Fairchild |
| Description | Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailore... |
| Features |
-3A, -30V. RDS(ON) = 0.18Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package.
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D
D
G
D
S
G
S
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation
T A = 25°C unless otherwise noted
NDT452P -30 ±20
(Note 1a)
Units V V A
±3 ±20
(Note 1a) (Note 1b) (Note 1c)
3 1.3 1.1 -65 to... |
| Datasheet |
 NDT452P Data Sheet
PDF 227.55KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Fairchild |
P-Channel MOSFET |
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Fairchild |
N-Channel MOSFET |
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Fairchild |
N-Channel MOSFET |
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Fairchild |
N-Channel MOSFET |
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Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
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Fairchild |
P-Channel Enhancement Mode Field Effect Transistor |
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Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
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Fairchild |
P-Channel Enhancement Mode Field Effect Transistor |
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Fairchild |
N-Channel MOSFET |
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VBsemi |
N-Channel MOSFET |
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Fairchild |
N-Channel MOSFET |
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Fairchild |
N-Channel MOSFET |
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Desde 2024. D4U Semiconductor.
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