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NDT451AN |
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| Part Number | NDT451AN |
| Manufacturer | Fairchild |
| Description | Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailore... |
| Features |
7.2A, 30V. RDS(ON) = 0.035Ω @ VGS = 10V RDS(ON) = 0.05Ω @ VGS = 4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package.
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Absolute Maximum Ratings
Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed PD Maximum Power Dissipation
T A= 25°C unless otherwise noted
NDT451AN 30 ± 20
(Note 1a)
Units V V A
± 7.2 ± 25
(Note 1a) (Note 1b) (Note 1c)
3 1.3 1.1 -... |
| Document |
 NDT451AN Data Sheet
PDF 227.12KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NDT451 |
Fairchild |
N-Channel MOSFET |
|
| 2 | NDT451N |
Fairchild |
N-Channel MOSFET |
|
| 3 | NDT452AP |
Fairchild |
P-Channel MOSFET |
|
| 4 | NDT452P |
Fairchild |
P-Channel Enhancement Mode Field Effect Transistor |
|
| 5 | NDT453N |
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
|
| 6 | NDT454P |
Fairchild |
P-Channel Enhancement Mode Field Effect Transistor |
|
| 7 | NDT455N |
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
|
| 8 | NDT456P |
Fairchild |
P-Channel Enhancement Mode Field Effect Transistor |
|
| 9 | NDT410EL |
Fairchild |
N-Channel MOSFET |
|
| 10 | NDT014 |
VBsemi |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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