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NDT014 |
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| Part Number | NDT014 |
| Manufacturer | Fairchild |
| Description | Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC moto. |
| Features | 2.7A, 60V. RDS(ON) = 0.2Ω @ VGS = 10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. _________________________________________________________________________________________________________ D D G D S G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation T A = 25°C unless otherwise noted NDT014 60 ±20 (Note 1a) Units V V A ±2.7 ±10 (Note 1a) (Note 1b) (Note 1c) 3 1.3 1.1 -65 to 150 . |
| Datasheet |
 NDT014 Data Sheet
PDF 225.30KB |
| Distributor | Stock | Price | Buy |
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NDT014 |
| Part Number | NDT014 |
| Manufacturer | VBsemi |
| Title | N-Channel MOSFET |
| Description | NDT014-VB NDT014-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.076 at VGS = 10 V 60 0.085 at VGS = 4.5 V ID (A)a 4.5 3.5 Qg (Typ.) 10 nC FEATURES • Halogen-free • TrenchFET® Power MOSFET APPLICATIONS • Load Switches for Portable Devices D RoH. |
| Features |
• Halogen-free • TrenchFET® Power MOSFET APPLICATIONS • Load Switches for Portable Devices D RoHS COMPLIANT SOT-223-3 D S D G G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 60 V VGS ± 20 TC = 25 °C 4.5 Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 3.2 a 2. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NDT014L |
Fairchild |
N-Channel MOSFET |
|
| 2 | NDT01N60 |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 3 | NDT01N60T1G |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 4 | NDT02N40 |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 5 | NDT02N60Z |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 6 | NDT03N40Z |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 7 | NDT28P |
Insignis |
2Gb (x8) DDR3L Synchronous DRAM |
|
| 8 | NDT2955 |
Fairchild |
P-Channel MOSFET |
|
| 9 | NDT3055 |
Fairchild |
N-Channel MOSFET |
|
| 10 | NDT3055L |
ON Semiconductor |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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Desde 2024. D4U Semiconductor.
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