NDT451 |
Part Number | NDT451 |
Manufacturer | Fairchild |
Description | Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC moto. |
Features | 5.5A, 30V. RDS(ON) = 0.05Ω @ VGS = 10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ___________________________________________________________________________________________________________ D D G D S G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation T A = 25°C unless otherwise noted NDT451N 30 ±20 (Note 1a) Units V V A ±5.5 ±25 (Note 1a) (Note 1b) (Note 1c) 3 1.3 1.1 -65 to . |
Datasheet |
NDT451 Data Sheet
PDF Direct Link |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | NDT451AN |
Fairchild |
N-Channel MOSFET | |
2 | NDT451N |
Fairchild |
N-Channel MOSFET | |
3 | NDT452AP |
Fairchild |
P-Channel MOSFET | |
4 | NDT452P |
Fairchild |
P-Channel Enhancement Mode Field Effect Transistor | |
5 | NDT453N |
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor | |
6 | NDT454P |
Fairchild |
P-Channel Enhancement Mode Field Effect Transistor | |
7 | NDT455N |
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor | |
8 | NDT456P |
Fairchild |
P-Channel Enhancement Mode Field Effect Transistor | |
9 | NDT410EL |
Fairchild |
N-Channel MOSFET | |
10 | NDT014 |
VBsemi |
N-Channel MOSFET |