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NDT014L |
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| Part Number | NDT014L |
| Manufacturer | Fairchild |
| Description | These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.This very high density process is especially ... |
| Features |
2.8 A, 60 V. RDS(ON) = 0.2 Ω @ VGS = 4.5 V RDS(ON) = 0.16 Ω @ VGS = 10 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package.
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Absolute Maximum Ratings
Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
T A = 25°C unless otherwise noted
NDT014L 60 ± 20
(Note 1a)
Units V V A
- Continuous - Pulsed
± 2.8 ± 10
PD
Maximum Power Dissipation
(Note 1a) (Note 1b) (Note 1c)
3 1... |
| Document |
 NDT014L Data Sheet
PDF 229.66KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NDT014 |
VBsemi |
N-Channel MOSFET |
|
| 2 | NDT014 |
Fairchild |
N-Channel MOSFET |
|
| 3 | NDT01N60 |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 4 | NDT01N60T1G |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 5 | NDT02N40 |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 6 | NDT02N60Z |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 7 | NDT03N40Z |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 8 | NDT28P |
Insignis |
2Gb (x8) DDR3L Synchronous DRAM |
|
| 9 | NDT2955 |
Fairchild |
P-Channel MOSFET |
|
| 10 | NDT3055 |
Fairchild |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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