| Description | ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 80V(Min) ·Complement to type BD140 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as audio amplifiers and drivers utilizing complement... |
| Features | sc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= 0.5A;... |
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Comset Semiconductors |
NPN Silicon Transistor |
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Solitron Devices |
NPN Silicon Power |
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SeCoS |
NPN Plastic Encapsulated Transistor |
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INCHANGE |
NPN Transistor |
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NXP |
NPN power transistor |
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Comset Semiconductors |
SILICON PLANAR EPITAXIAL POWER TRANSISTORS |
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SavantIC |
SILICON POWER TRANSISTOR |
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Comset Semiconductors |
SILICON PLANAR EPITAXIAL POWER TRANSISTORS |
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INCHANGE |
PNP Transistor |
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ROHM |
Ground Sense Low Power General Purpose Operational Amplifiers |
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