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BD139 |
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| Part Number | BD139 |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 80V(Min) ·Complement to type BD140 ·Minimum Lot-to-Lot variations for robust device performance and rel... |
| Features |
sc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 0.5A; VCE= 2V
VCB= 30V; IE= 0 VCB= 30V; IE= 0,TC=125℃
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 5mA ; VCE= 2V
hFE-2
DC Current Gain
IC= 0.5A ; VCE= 2V
hFE-3
DC Current Gain
IC= 0.15A ; VCE= 2V
BD1... |
| Document |
 BD139 Data Sheet
PDF 203.72KB |
| Distributor | Stock | Price | Buy |
|---|
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Desde 2024. D4U Semiconductor.
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