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BD130 |
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| Part Number | BD130 |
| Manufacturer | Comset Semiconductors |
| Description | BD130 S w w w .D a t a h t e e 4U . m o c NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS The BD130 is a silicon epitaxial-base NPN transistor in JEDEC TO3 metal case. It is... |
| Features |
Collector-Emitter Breakdown Voltage (*)
IC=200 mA, IB=0
60
V
VCE(SAT)
Collector-Emitter Saturation IC=4 A, IB=0.4 A Voltage (*)
-
0.5
1.1
V
ICEX
Collector-Emitter Cutoff Current
VCE=100 V VBE=-1.5 V
-
-
0.5 mA
VCE=100 V VBE=-1.5 V TCASE=150°C
-
-
30
IEBO
Emitter-Base Cutoff Current
VEB=7 V
-
-
5.0
mA
VBE
Base-Emitter Voltage (*)
IC=4.0 A, VCE=4.0V
-
0.95
1.8
V
fT
Transition Frequency
IC=0.1 A, VCE=4 V
1.1
MHz
COMSET SEMICONDUCTORS
2/3
BD130
Symbol Ratings
Test Condition(s)
Min Typ Mx Unit
h21E
Static Forward Current Transfer Ratio (*)
VCE=4.0 V, I... |
| Document |
 BD130 Data Sheet
PDF 167.82KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD130 |
Solitron Devices |
NPN Silicon Power |
|
| 2 | BD13003B |
SeCoS |
NPN Plastic Encapsulated Transistor |
|
| 3 | BD131 |
INCHANGE |
NPN Transistor |
|
| 4 | BD131 |
NXP |
NPN power transistor |
|
| 5 | BD131 |
Comset Semiconductors |
SILICON PLANAR EPITAXIAL POWER TRANSISTORS |
|
| 6 | BD132 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | BD132 |
Comset Semiconductors |
SILICON PLANAR EPITAXIAL POWER TRANSISTORS |
|
| 8 | BD132 |
INCHANGE |
PNP Transistor |
|
| 9 | BD1321G |
ROHM |
Ground Sense Low Power General Purpose Operational Amplifiers |
|
| 10 | BD134 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
Desde 2024. D4U Semiconductor.
|