Part Number | SI2306 |
Distributor | Stock | Price | Buy |
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Part Number | Si2306 |
Manufacturer | BLUE ROCKET ELECTRONICS |
Title | N-CHANNEL MOSFET |
Description | SOT-23 N MOS 。N- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features , MOS 。 Trench FET Power MOSFET 100% Rg Tested. / Applications 。 Primarily the display screen drive applications. / Equivalent Circuit / Pinning 3 2 1 PIN1:S PIN 2:G PIN 3:D / Marking Marking H306 http://www.f. |
Features |
, MOS 。 Trench FET Power MOSFET 100% Rg Tested.
/ Applications 。 Primarily the display screen drive applications.
/ Equivalent Circuit
/ Pinning
3
2 1
PIN1:S
PIN 2:G
PIN 3:D
/ Marking Marking
H306
http://www.fsbrec.com
1/6
SI2306
Rev.E Mar.-2016
DATA SHEET
/ Absolute Maximum Ratings(Ta=25℃)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous Drain Cur. |
Part Number | Si2306 |
Manufacturer | SiPU |
Title | N-Channel Enhancement Mode Field Effect Transistor |
Description | Si2306 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ 20V 3.6A 33 @ VGS=4.5V 52 @ VGS=2.5V NOTE The Si2306 is available in a lead-fre. |
Features | Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ 20V 3.6A 33 @ VGS=4.5V 52 @ VGS=2.5V NOTE The Si2306 is available in a lead-free package D S G ABSOLUTE MAXIUM RATINGS TA=25 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125 - Pulse d b Drain-source Diode Forwar. |
Part Number | Si2306 |
Manufacturer | JinYu |
Title | 20V N-Channel Enhancement Mode MOSFET |
Description | SI2306 20V N-Channel Enhancement Mode MOSFET Features VDS (V) = 20 V ID = 2.8 A RDS(ON) = 60mΩ @ VGS = 4.5V RDS(ON) = 70mΩ @ VGS = 2.5V Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G SOT-23 S REF. Millimeter Millimeter REF. |
Features | VDS (V) = 20 V ID = 2.8 A RDS(ON) = 60mΩ @ VGS = 4.5V RDS(ON) = 70mΩ @ VGS = 2.5V Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G SOT-23 S REF. Millimeter Millimeter REF. Min. Max. Min. Max . A 2.70 3.10 G 1.90 REF . B 2.40 2.80 H 1.00 1.30 0.20 C 1.40 1.60 K 0.10 D 0.35 0.50 J 0.40 1.15 E 0 0.10 L 0.85 F 0.45 0.55 M 0° 1. |
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