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| Part Number | SI2300 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | SI2300 |
| Manufacturer | JinYu |
| Title | 20V N-Channel MOSFET |
| Description | 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.0A RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 70m Ω 80mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applicatio. |
| Features | Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Package Dimensions SI2300 D SOT-23(PACKAGE) GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 1.00 0.10 0.40 0.85 REF. 1.30 0.. |
| Part Number | SI2300 |
| Manufacturer | HAOCHANG |
| Title | N-Channel MOSFET |
| Description | SHENZHEN HAOCHANG SEMICONDUCTOR CO.,LTD. SOT-23-3 Plastic-Encapsulate MOSFETS SI2300 N-Channel Enhancement MOSFET Features VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A VDS=20V ,RDS(ON)=75m @VGS=1.8V,ID=1.0A +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.9. |
| Features | VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A VDS=20V ,RDS(ON)=75m @VGS=1.8V,ID=1.0A +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.1 -0.1 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.10.68 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Co. |
| Part Number | SI2300 |
| Manufacturer | MCC |
| Title | N-Channel MOSFET |
| Description | MCC R Micro Commercial Components Micro Commercial Components 130 W Cochran St, Unit B Simi Valley, CA 93065 Tel:818-701-4933 SI2300 Features • Halogen free available upon request by adding suffix "-HF" • 20V,4.5A, RDS(ON)<25m¡@VGS=4.5V RDS(ON)<35m¡@VGS=2.5V • High dense cell design for extreme. |
| Features |
• Halogen free available upon request by adding suffix "-HF" • 20V,4.5A, RDS(ON)<25m¡@VGS=4.5V RDS(ON)<35m¡@VGS=2.5V • High dense cell design for extremely low RDS(ON) • Rugged and reliable • Lead free product is acquired • SOT-23 Package • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 Maximum Ratings @ 25OC Unless Otherwise Specified Symbol VDS ID VGS PD R©JA TJ TST. |
| Part Number | SI2300 |
| Manufacturer | SiPU |
| Title | N-Channel MOSFET |
| Description | Si2300 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ 20V 3.6A 33 @ VGS=4.5V 52 @ VGS=2.5V NOTE The Si2300 is available in a lead-fre. |
| Features | Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ 20V 3.6A 33 @ VGS=4.5V 52 @ VGS=2.5V NOTE The Si2300 is available in a lead-free package D S G ABSOLUTE MAXIUM RATINGS TA=25 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125 - Pulse d b Drain-source Diode Forwar. |
| Part Number | SI2300 |
| Manufacturer | Kexin |
| Title | N-Channel MOSFET |
| Description | SMD Type N-Channel Enhancement MOSFET SI2300 (KI2300) MOSFIECT Features VDS=20V ID=5.0A RDS(ON)=25m @VGS=4.5V,ID=5.0A RDS(ON)=35m @VGS=2.5V,ID=4.0A RDS(ON)=55m @VGS=1.8V,ID=1.0A +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1. |
| Features | VDS=20V ID=5.0A RDS(ON)=25m @VGS=4.5V,ID=5.0A RDS(ON)=35m @VGS=2.5V,ID=4.0A RDS(ON)=55m @VGS=1.8V,ID=1.0A +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 11.. BGasaete 22..ESmiotutrecre 33..cDolrlaeicntor Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Sour. |
| Part Number | SI2300 |
| Manufacturer | HOTTECH |
| Title | Plastic-Encapsulate Mosfets |
| Description | Plastic-Encapsulate Mosfets FEATURES Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Ratings Units Drain-Source Voltage VDS 20 V. |
| Features | Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Ratings Units Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 V Drain Current (Continuous) Drain Current (Pulsed) 1 Total Power Dissipation @TA=25 oC ID 6 A IDM 18 A . |
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| 2 | SI2301 |
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Desde 2024. D4U Semiconductor.
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