Busque con el número de pieza junto con el fabricante o la descripción
SI2300 |
Click to view a larger image
| Part Number | SI2300 |
| Manufacturer | HOTTECH |
| Description | Plastic-Encapsulate Mosfets FEATURES Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Absolute Maximum Rating... |
| Features |
Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Parameter
Symbol Ratings Units
Drain-Source Voltage
VDS 20 V
Gate-Source Voltage
VGS 8 V
Drain Current (Continuous) Drain Current (Pulsed) 1 Total Power Dissipation @TA=25 oC
ID 6
A
IDM 18
A
PD 1.25 W
Maximum Diode Forward Current
IS 1.6 A
Operating Junction and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted)2
Tj, Tstg -55 to +150 °C RθJA 140 °C/W
1: R... |
| Document |
 SI2300 Data Sheet
PDF 284.08KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
|