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| Part Number | SI2301 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | SI2301 |
| Manufacturer | JinYu |
| Title | P-Channel MOSFET |
| Description | 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), [email protected], [email protected] RDS(ON), [email protected], [email protected] 130mΩ 190mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions SI2301 D SOT-23(PACKAGE) GS REF. A B C D E F Millimeter . |
| Features | Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions SI2301 D SOT-23(PACKAGE) GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 1.00 0.10 0.40 0.85 REF. 1.30 0.20 1.15 0° 10° Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherw. |
| Part Number | SI2301 |
| Manufacturer | Kexin |
| Title | P-Channel MOSFET |
| Description | SMD Type P-Channel Enhancement MOSFET SI2301 (KI2301) MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) ＜ 100mΩ (VGS =-4.5V) ● RDS(ON) ＜ 150mΩ (VGS =-2.5V) G1 S2 3D +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.1 -0.1 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15. |
| Features |
● VDS (V) =-20V ● RDS(ON) ＜ 100mΩ (VGS =-4.5V) ● RDS(ON) ＜ 150mΩ (VGS =-2.5V) G1 S2 3D +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.1 -0.1 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.10.68 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Curre. |
| Part Number | SI2301 |
| Manufacturer | MCC |
| Title | P-Channel Enhancement Mode Field Effect Transistor |
| Description | MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# SI2301 Features • • • • • • • • Maximum Ratings @ 25OC Unless Otherwise Specified Symbol VDS ID IDM VGS PD RθJA TJ TSTG Parameter Drain-source V. |
| Features |
• • • • • • • • Maximum Ratings @ 25OC Unless Otherwise Specified Symbol VDS ID IDM VGS PD RθJA TJ TSTG Parameter Drain-source Voltage Drain Current-Continuous Drain Current-Pulsed a Gate-source Voltage Total Power Dissipation Thermal Resistance Junction to Ambientb Operating Junction Temperature Storage Temperature Rating -20 -2.8 -10 ±8 1.25 100 -55 to +150 -55 to +150 Unit V A A V W ℃/W ℃ ℃ -. |
| Part Number | SI2301 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | P-CHANNEL MOSFET |
| Description | SOT-23 P MOS 。P- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features ,MOS 。 Trench FET Power MOSFET 100% Rg Tested. / Applications 。 Primarily the display screen drive applications. / Equivalent Circuit / Pinning 3 2 1 PIN1：S PIN 2：G PIN 3：D / Marking Marking A1H http://www.fsb. |
| Features |
,MOS 。 Trench FET Power MOSFET 100% Rg Tested.
/ Applications 。 Primarily the display screen drive applications.
/ Equivalent Circuit
/ Pinning
3
2 1
PIN1：S
PIN 2：G
PIN 3：D
/ Marking Marking
A1H
http://www.fsbrec.com
1/6
SI2301
Rev.E Mar.-2016
DATA SHEET
/ Absolute Maximum Ratings(Ta=25℃)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous Drain Curre. |
| Part Number | SI2301 |
| Manufacturer | SiPU |
| Title | P-Channel MOSFET |
| Description | Si2301 P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ -20V -3.6A 95@ VGS=-4.5V 115 @ VGS=-2.5V NOTE The Si2301 is available in a lea. |
| Features | Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ -20V -3.6A 95@ VGS=-4.5V 115 @ VGS=-2.5V NOTE The Si2301 is available in a lead-free package D S G ABSOLUTE MAXIUM RATINGS TA=25 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125 - Pulse d b Drain-source Diode F. |
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Desde 2024. D4U Semiconductor.
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