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SI2306 |
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| Part Number | SI2306 |
| Manufacturer | JinYu |
| Description | SI2306 20V N-Channel Enhancement Mode MOSFET Features VDS (V) = 20 V ID = 2.8 A RDS(ON) = 60mΩ @ VGS = 4.5V RDS(ON) = 70mΩ @ VGS = 2.5V Features Advanced trench process technology High Density Cell D... |
| Features |
VDS (V) = 20 V ID = 2.8 A RDS(ON) = 60mΩ @ VGS = 4.5V RDS(ON) = 70mΩ @ VGS = 2.5V
Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions
D
G
SOT-23
S
REF.
Millimeter Millimeter REF. Min. Max. Min. Max . A 2.70 3.10 G 1.90 REF . B 2.40 2.80 H 1.00 1.30 0.20 C 1.40 1.60 K 0.10 D 0.35 0.50 J 0.40 1.15 E 0 0.10 L 0.85 F 0.45 0.55 M 0° 10°
Absolute Maximum Ratings @TA = 25℃ unless otherwise noted Parameter S
Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Power Dissipation (Note 1) Operating and Storage Temperature R... |
| Document |
 SI2306 Data Sheet
PDF 546.12KB |
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