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Si2306 |
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| Part Number | Si2306 |
| Manufacturer | SiPU |
| Description | Si2306 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID... |
| Features |
Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package
PRODUCT SUMMARY
VDSS
ID RDS(ON) (m ) Typ
20V 3.6A
33 @ VGS=4.5V 52 @ VGS=2.5V
NOTE The Si2306 is available in a lead-free package
D
S G
ABSOLUTE MAXIUM RATINGS TA=25
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuousª@Tj=125
- Pulse d b
Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range
unless otherwise noted
Symbol
VDS VGS ID
Limit
20 ±8 3.6
IDM 12
IS 1.25 PD 1.25
TJ,TSTG
-55 to 150
Unit
V... |
| Document |
 Si2306 Data Sheet
PDF 112.91KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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