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| Part Number | SI2306 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | SI2306 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | N-CHANNEL MOSFET |
| Description | SOT-23 N MOS 。N- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features , MOS 。 Trench FET Power MOSFET 100% Rg Tested. / Applications 。 Primarily the display screen drive applications. / Equivalent Circuit / Pinning 3 2 1 PIN1：S PIN 2：G PIN 3：D / Marking Marking H306 http://www.f. |
| Features |
, MOS 。 Trench FET Power MOSFET 100% Rg Tested.
/ Applications 。 Primarily the display screen drive applications.
/ Equivalent Circuit
/ Pinning
3
2 1
PIN1：S
PIN 2：G
PIN 3：D
/ Marking Marking
H306
http://www.fsbrec.com
1/6
SI2306
Rev.E Mar.-2016
DATA SHEET
/ Absolute Maximum Ratings(Ta=25℃)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous Drain Cur. |
| Part Number | SI2306 |
| Manufacturer | SiPU |
| Title | N-Channel Enhancement Mode Field Effect Transistor |
| Description | Si2306 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ 20V 3.6A 33 @ VGS=4.5V 52 @ VGS=2.5V NOTE The Si2306 is available in a lead-fre. |
| Features | Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ 20V 3.6A 33 @ VGS=4.5V 52 @ VGS=2.5V NOTE The Si2306 is available in a lead-free package D S G ABSOLUTE MAXIUM RATINGS TA=25 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125 - Pulse d b Drain-source Diode Forwar. |
| Part Number | SI2306 |
| Manufacturer | JinYu |
| Title | 20V N-Channel Enhancement Mode MOSFET |
| Description | SI2306 20V N-Channel Enhancement Mode MOSFET Features VDS (V) = 20 V ID = 2.8 A RDS(ON) = 60mΩ @ VGS = 4.5V RDS(ON) = 70mΩ @ VGS = 2.5V Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G SOT-23 S REF. Millimeter Millimeter REF. |
| Features | VDS (V) = 20 V ID = 2.8 A RDS(ON) = 60mΩ @ VGS = 4.5V RDS(ON) = 70mΩ @ VGS = 2.5V Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G SOT-23 S REF. Millimeter Millimeter REF. Min. Max. Min. Max . A 2.70 3.10 G 1.90 REF . B 2.40 2.80 H 1.00 1.30 0.20 C 1.40 1.60 K 0.10 D 0.35 0.50 J 0.40 1.15 E 0 0.10 L 0.85 F 0.45 0.55 M 0° 1. |
similar datasheet
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Desde 2024. D4U Semiconductor.
|