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NP12N30G |
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| Part Number | NP12N30G |
| Manufacturer | natlinear |
| Description | Schematic diagram The NP12N30G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.It can be used in a wide variety of applications. General Features VDS =300V，ID =12A RDS(ON)(Typ.)= 250mΩ @VGS=10V High density cell design for ultra low Rdson Marking and pin assignment Fully characterized avalanche voltage and curre. |
| Features | VDS =300V，ID =12A RDS(ON)(Typ.)= 250mΩ @VGS=10V High density cell design for ultra low Rdson Marking and pin assignment Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Application Automotive applications Hard switched and high frequency circuits Uninterruptible power supply Package TO-252-2L XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP12N30G-G Storage Temperature -55°C to +150°C Package TO-252-2L Devices Per Reel 2500 Absolute Maximum Rating. |
| Datasheet |
 NP12N30G Data Sheet
PDF 619.27KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NP12N04ER |
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| 3 | NP120N04NUK |
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| 4 | NP100N04NUJ |
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| 5 | NP100N04PUK |
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| 6 | NP100N055PUK |
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| 7 | NP100P02D6 |
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| 9 | NP100P04PLG |
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| 10 | NP100P06PDG |
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Desde 2024. D4U Semiconductor.
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