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NP120N03D6 |
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| Part Number | NP120N03D6 |
| Manufacturer | natlinear |
| Description | Schematic diagram The NP120N03D6 uses Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) . This device is ideal for high-frequency switching and synchronous rectification. General Features . |
| Features |
VDS =30V，ID =120A RDS(ON)(Typ.)= 2.1mΩ @VGS=10V RDS(ON)(Typ.)= 2.9mΩ @VGS=4.5V
Very low on-resistance RDS(on) 150 °C operating temperature 100% UIS tested
Marking and pin assignment
Application
Synchronus Rectification in DC/DC and AC/DC
Converters Industrial and Motor Drive applications
XXXX—Wafer Information YYYY—Quality Code
Ordering Information
Part Number NP120N03D6-G
Storage Temperature -55°C to +150°C
Package PDFN5 *6-8L-A Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter Drain-source voltage Gate-source voltage Continuous Drain Current TC=25°C . |
| Datasheet |
 NP120N03D6 Data Sheet
PDF 673.28KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NP120N04NUK |
Renesas |
N-Channel MOSFET |
|
| 2 | NP12N04ER |
natlinear |
40V N-Channel Enhancement Mode MOSFET |
|
| 3 | NP12N30G |
natlinear |
300V N-Channel Enhancement Mode MOSFET |
|
| 4 | NP100N04NUJ |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 5 | NP100N04PUK |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 6 | NP100N055PUK |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 7 | NP100P02D6 |
natlinear |
20V P-Channel Enhancement Mode MOSFET |
|
| 8 | NP100P04PDG |
NEC |
MOS FIELD EFFECT TRANSISTOR |
|
| 9 | NP100P04PLG |
NEC |
MOS FIELD EFFECT TRANSISTOR |
|
| 10 | NP100P06PDG |
Renesas |
P-channel Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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