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NP100P04PLG |
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| Part Number | NP100P04PLG |
| Manufacturer | NEC |
| Description |
The NP100P04PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. |
| Features |
• Super low on-state resistance RDS(on)1 = 3.7 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID(DC) = m100 A • Built-in gate protection diode (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg −40 m20 m100 m300 200 1.8 175 −55 to +175 74 550 V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage . |
| Datasheet |
 NP100P04PLG Data Sheet
PDF 210.90KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NP100P04PDG |
NEC |
MOS FIELD EFFECT TRANSISTOR |
|
| 2 | NP100P02D6 |
natlinear |
20V P-Channel Enhancement Mode MOSFET |
|
| 3 | NP100P06PDG |
Renesas |
P-channel Power MOSFET |
|
| 4 | NP100P06PDG |
NEC |
MOS FIELD EFFECT TRANSISTOR |
|
| 5 | NP100P06PLG |
NEC |
MOS FIELD EFFECT TRANSISTOR |
|
| 6 | NP100N04NUJ |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 7 | NP100N04PUK |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 8 | NP100N055PUK |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 9 | NP109N04PUG |
Renesas |
N-Channel Power MOSFET |
|
| 10 | NP109N04PUK |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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