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NP100P02D6 |
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| Part Number | NP100P02D6 |
| Manufacturer | natlinear |
| Description | Schematic diagram The NP100P02D6 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications General Features VDS =-20V，ID =-100A RDS(ON)(Typ.)=2.5mΩ @VGS=-4.5V RDS(ON)(Typ.)=3mΩ @VGS=-2.5V High power and current handing capability Lead free product is acquired Surface mount. |
| Features |
VDS =-20V，ID =-100A RDS(ON)(Typ.)=2.5mΩ @VGS=-4.5V RDS(ON)(Typ.)=3mΩ @VGS=-2.5V
High power and current handing capability Lead free product is acquired Surface mount package 150 °C operating temperature 100% UIS tested
Marking and pin assignment
Application
PWM applications Load switch Uninterruptible power supply
Package
PDFN5 *6-8L-A XXXX—Wafer Information YYYYY—Quality Code Ordering Information Part Number NP100P02D6-G Storage Temperature -55°C to +150°C Package PDFN5 *6-8L-A Devices Per Reel 5000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter. |
| Datasheet |
 NP100P02D6 Data Sheet
PDF 680.45KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NP100P04PDG |
NEC |
MOS FIELD EFFECT TRANSISTOR |
|
| 2 | NP100P04PLG |
NEC |
MOS FIELD EFFECT TRANSISTOR |
|
| 3 | NP100P06PDG |
Renesas |
P-channel Power MOSFET |
|
| 4 | NP100P06PDG |
NEC |
MOS FIELD EFFECT TRANSISTOR |
|
| 5 | NP100P06PLG |
NEC |
MOS FIELD EFFECT TRANSISTOR |
|
| 6 | NP100N04NUJ |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 7 | NP100N04PUK |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 8 | NP100N055PUK |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 9 | NP109N04PUG |
Renesas |
N-Channel Power MOSFET |
|
| 10 | NP109N04PUK |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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