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NP12N04ER |
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| Part Number | NP12N04ER |
| Manufacturer | natlinear |
| Description | Schematic diagram The NP12N04ER uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Conduction and switching losses are minimized due to an extremely low combination of RDS(ON) and Crss. D G General Features S VDS =40V, ID =12A RDS(ON)(Typ.)=12.7mΩ @ V GS =10V RDS(ON)(Typ.)=14.5. |
| Features | S VDS =40V, ID =12A RDS(ON)(Typ.)=12.7mΩ @ V GS =10V RDS(ON)(Typ.)=14.5mΩ @ V GS =4.5V Lead free product is acquired Surface mount package Marking and pin assignment ESOP-8 Application High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System Load switch Package ESOP-8 HF Pb XXXX—Wafer Lot No. YYYY—Quality Code Ordering Information Part Number NP12N04ER--G Storage Temperature -55°C to +150°C Package ESOP-8 Devices Per Reel 4000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter Drain-source voltage Gat. |
| Datasheet |
 NP12N04ER Data Sheet
PDF 393.67KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NP12N30G |
natlinear |
300V N-Channel Enhancement Mode MOSFET |
|
| 2 | NP120N03D6 |
natlinear |
30V N-Channel Enhancement Mode MOSFET |
|
| 3 | NP120N04NUK |
Renesas |
N-Channel MOSFET |
|
| 4 | NP100N04NUJ |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 5 | NP100N04PUK |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 6 | NP100N055PUK |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 7 | NP100P02D6 |
natlinear |
20V P-Channel Enhancement Mode MOSFET |
|
| 8 | NP100P04PDG |
NEC |
MOS FIELD EFFECT TRANSISTOR |
|
| 9 | NP100P04PLG |
NEC |
MOS FIELD EFFECT TRANSISTOR |
|
| 10 | NP100P06PDG |
Renesas |
P-channel Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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