| Description | SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with tempe... |
| Features | VCC=50V, RGE=25Ω start TJ=25°C Gate-emitter voltage static transient (tp<1µs, D<0.05) Short circuit withstand time2) VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature, 1.6mm (0.063 in.) from case for 10s VCE IC ICpuls - EAS VGE tSC Ptot Tj , Tstg Tj(tl) - 600 41 3... |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Fairchild Semiconductor |
SMPS Series N-Channel IGBT |
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Fairchild Semiconductor |
NPT IGBT |
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Fairchild Semiconductor |
N-Channel IGBT |
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Intersil Corporation |
N-Channel IGBT |
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MACOM |
Voltage-Controlled Attenuator Module |
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IXYS |
Anode Shorted Gate Turn-Off Thyristor |
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IXYS |
Anode Shorted Gate Turn-Off Thyristor |
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GTM |
N-CHANNEL MOSFET |
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GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Desde 2024. D4U Semiconductor.
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