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G30N60B3 |
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| Part Number | G30N60B3 |
| Manufacturer | Fairchild Semiconductor |
| Description | HGTG30N60B3 Data Sheet November 2013 600 V, NPT IGBT The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The I... |
| Features |
of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter and power supplies.
Features
• 30 A, 600 V, TC = 110°C • Low Saturation Voltage: VCE(sat) = 1.45 V @ IC = 30 A • Typical Fall Time. . . . . . . . 90ns at TJ = 150°C • Short Circuit Rating • Low Conduction Loss Formerly Developmental Type TA49170. Ordering Information PART NUMBER HGTG30N60B3 PACKAGE TO-247 BRAND G30N60B3 Packagi... |
| Document |
 G30N60B3 Data Sheet
PDF 396.91KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | G30N60B3D |
Fairchild Semiconductor |
N-Channel IGBT |
|
| 2 | G30N60A4D |
Fairchild Semiconductor |
SMPS Series N-Channel IGBT |
|
| 3 | G30N60C3D |
Intersil Corporation |
N-Channel IGBT |
|
| 4 | G30N60HS |
Infineon |
High Speed IGBT |
|
| 5 | G30 |
MACOM |
Voltage-Controlled Attenuator Module |
|
| 6 | G3000TF250 |
IXYS |
Anode Shorted Gate Turn-Off Thyristor |
|
| 7 | G3000TF450 |
IXYS |
Anode Shorted Gate Turn-Off Thyristor |
|
| 8 | G3018 |
GTM |
N-CHANNEL MOSFET |
|
| 9 | G3018K |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 10 | G301K |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
Desde 2024. D4U Semiconductor.
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