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G30 |
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| Part Number | G30 |
| Manufacturer | MACOM |
| Description | The G30 attenuator is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This design uses three pin diodes to provide a non linear attenuation response across a broadband frequency range. Both TO-8 and Surface Mount packages are hermetically sealed, and MIL-STD-883 environmental screening is . |
| Features |
FAST SWITCHING: < 0.2 µsec, 10 TO 90% (TYP.) < 1 µsec, 0 TO 100% (TYP.) HIGH DYNAMIC RANGE: 40 dB TO 1000 MHz (TYP.) LOW VSWR: 1.4:1 (TYP.) Description The G30 attenuator is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This design uses three pin diodes to provide a non linear attenuation response across a broadband frequency range. Both TO-8 and Surface Mount packages are hermetically sealed, and MIL-STD-883 environmental screening is available. Ordering Information Product Image Part Number Package G30 TO-8 S. |
| Datasheet |
 G30 Data Sheet
PDF 672.97KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | G3000TF250 |
IXYS |
Anode Shorted Gate Turn-Off Thyristor |
|
| 2 | G3000TF450 |
IXYS |
Anode Shorted Gate Turn-Off Thyristor |
|
| 3 | G3018 |
GTM |
N-CHANNEL MOSFET |
|
| 4 | G3018K |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 5 | G301K |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 6 | G30FG |
HV Component |
G-Low Current High Voltage Rectifiers |
|
| 7 | G30FP |
GETE ELECTRONICS |
HIGH VOLTAGE DIODES |
|
| 8 | G30FP |
HV Component |
G-Low Current High Voltage Rectifiers |
|
| 9 | G30FS |
HV Component |
Fast Recovery High Voltage Rectifier |
|
| 10 | G30GE |
HV Component |
G-Low Current High Voltage Rectifiers |
|
Desde 2024. D4U Semiconductor.
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