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G30N60C3D |
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| Part Number | G30N60C3D |
| Manufacturer | Intersil Corporation |
| Description | www.DataSheet4U.com HGTG30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage swit... |
| Features |
of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA49014.
Features
• 63A, 600V at TC = 25oC • Typical Fall Time. . . . .... |
| Document |
 G30N60C3D Data Sheet
PDF 153.77KB |
| Distributor | Stock | Price | Buy |
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Desde 2024. D4U Semiconductor.
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