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G30N60A4D |
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| Part Number | G30N60A4D |
| Manufacturer | Fairchild Semiconductor |
| Description | HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features o... |
| Features |
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49343. The diode used in anti-parallel is the development type TA49373. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49345.
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| Document |
 G30N60A4D Data Sheet
PDF 209.91KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | G30N60B3 |
Fairchild Semiconductor |
NPT IGBT |
|
| 2 | G30N60B3D |
Fairchild Semiconductor |
N-Channel IGBT |
|
| 3 | G30N60C3D |
Intersil Corporation |
N-Channel IGBT |
|
| 4 | G30N60HS |
Infineon |
High Speed IGBT |
|
| 5 | G30 |
MACOM |
Voltage-Controlled Attenuator Module |
|
| 6 | G3000TF250 |
IXYS |
Anode Shorted Gate Turn-Off Thyristor |
|
| 7 | G3000TF450 |
IXYS |
Anode Shorted Gate Turn-Off Thyristor |
|
| 8 | G3018 |
GTM |
N-CHANNEL MOSFET |
|
| 9 | G3018K |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 10 | G301K |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
Desde 2024. D4U Semiconductor.
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