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G30N60B3D |
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| Part Number | G30N60B3D |
| Manufacturer | Fairchild Semiconductor |
| Description | HGTG30N60B3D Data Sheet www.DataSheet4U.com April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining... |
| Features |
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.... |
| Document |
 G30N60B3D Data Sheet
PDF 264.05KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | G30N60B3 |
Fairchild Semiconductor |
NPT IGBT |
|
| 2 | G30N60A4D |
Fairchild Semiconductor |
SMPS Series N-Channel IGBT |
|
| 3 | G30N60C3D |
Intersil Corporation |
N-Channel IGBT |
|
| 4 | G30N60HS |
Infineon |
High Speed IGBT |
|
| 5 | G30 |
MACOM |
Voltage-Controlled Attenuator Module |
|
| 6 | G3000TF250 |
IXYS |
Anode Shorted Gate Turn-Off Thyristor |
|
| 7 | G3000TF450 |
IXYS |
Anode Shorted Gate Turn-Off Thyristor |
|
| 8 | G3018 |
GTM |
N-CHANNEL MOSFET |
|
| 9 | G3018K |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 10 | G301K |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
Desde 2024. D4U Semiconductor.
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