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G30N60HS |
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| Part Number | G30N60HS |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technolo... |
| Features |
VCC=50V, RGE=25Ω start TJ=25°C Gate-emitter voltage static
transient (tp<1µs, D<0.05)
Short circuit withstand time2) VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature
Time limited operating junction temperature for t < 150h Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE IC
ICpuls -
EAS
VGE
tSC
Ptot
Tj , Tstg Tj(tl) -
600
41 30 112 112
165
±20 ±30 10
250
-55...+150
175 260
Unit V A
mJ V µs W °C
1 J-STD-020 and JESD-022 2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
... |
| Document |
 G30N60HS Data Sheet
PDF 379.78KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | G30N60A4D |
Fairchild Semiconductor |
SMPS Series N-Channel IGBT |
|
| 2 | G30N60B3 |
Fairchild Semiconductor |
NPT IGBT |
|
| 3 | G30N60B3D |
Fairchild Semiconductor |
N-Channel IGBT |
|
| 4 | G30N60C3D |
Intersil Corporation |
N-Channel IGBT |
|
| 5 | G30 |
MACOM |
Voltage-Controlled Attenuator Module |
|
| 6 | G3000TF250 |
IXYS |
Anode Shorted Gate Turn-Off Thyristor |
|
| 7 | G3000TF450 |
IXYS |
Anode Shorted Gate Turn-Off Thyristor |
|
| 8 | G3018 |
GTM |
N-CHANNEL MOSFET |
|
| 9 | G3018K |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 10 | G301K |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
Desde 2024. D4U Semiconductor.
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