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EMB07N03VQ Single N-Channel Logic Level Enhancement Mode Field Effect Transistor Datasheet


EMB07N03VQ

Excelliance MOS
EMB07N03VQ

Part Number EMB07N03VQ
Manufacturer Excelliance MOS
Description N-CH BVDSS 30 V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 7.8 mΩ 10.5 mΩ ID @TC=25℃ 73 A Single N Channel MOSFET UIS, Rg 100% Tested Pb-...
Features MAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient3 SYMBOL RθJC RθJA TYPICAL 1Pulse width limited by maximum junction temperature. 2Duty cycle < 1% 355°C / W when mounted on a 1 in2 pad of 2 oz copper. 4Guarantee by Engineering test MAXIMUM 1.5 55 UNIT °C/W 2020/4/1...

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EMB07N03V

Excelliance MOS
EMB07N03V
Part Number EMB07N03V
Manufacturer Excelliance MOS
Title N-Channel Logic Level Enhancement Mode Field Effect Transistor
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 7mΩ ID 24A N Channel MOSFET UIS, R.
Features 9/2 EMB07N03VL LIMITS ±20 24 15 17 96 15 11.25 5.62 21 8.3 2.5 1 -55 to 150 UNIT V A mJ W W °C MAXIMUM 6 50 UNIT °C / W p.1 EMB07N03VL PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Volt.

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