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EMB07N03A N-Channel Logic Level Enhancement Mode Field Effect Transistor Datasheet


EMB07N03A

Excelliance MOS
EMB07N03A

Part Number EMB07N03A
Manufacturer Excelliance MOS
Description EMB07N03A N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 7mΩ ID 70A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIM...
Features NIT °C / W 2014/3/10 p.1 EMB07N03A ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V VGS = 10V, ID = 30A VGS = 4.5V, ID = 20A VDS = 5V, I...

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Excelliance MOS
EMB07N03VQ
Part Number EMB07N03VQ
Manufacturer Excelliance MOS
Title Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
Description N-CH BVDSS 30 V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 7.8 mΩ 10.5 mΩ ID @TC=25℃ 73 A Single N Channel MOSFET UIS, Rg 100% Tested Pb-.
Features MAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient3 SYMBOL RθJC RθJA TYPICAL 1Pulse width limited by maximum junction temperature. 2Duty cycle < 1% 355°C / W when mounted on a 1 in2 pad of 2 oz copper. 4Guarantee by Engineering test MAXIMUM 1.5 55 UNIT °C/W 2020/4/1.

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Excelliance MOS
EMB07N03V
Part Number EMB07N03V
Manufacturer Excelliance MOS
Title N-Channel Logic Level Enhancement Mode Field Effect Transistor
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 7mΩ ID 24A N Channel MOSFET UIS, R.
Features 9/2 EMB07N03VL LIMITS ±20 24 15 17 96 15 11.25 5.62 21 8.3 2.5 1 -55 to 150 UNIT V A mJ W W °C MAXIMUM 6 50 UNIT °C / W p.1 EMB07N03VL PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Volt.

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Excelliance MOS
EMB07N03HS
Part Number EMB07N03HS
Manufacturer Excelliance MOS
Title Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
Description N-CH BVDSS 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 7.0mΩ 10.6mΩ ID @TC=25℃ 51.0A ID @TA=25℃ 14.0A Single N Channel MOSFET UIS, R.
Features ient3 RθJA 1Pulse width limited by maximum junction temperature. 2Duty cycle < 1% 355°C / W when mounted on a 1 in2 pad of 2 oz copper. 4Guarantee by Engineering test TYPICAL 2020/8/26 A.1 EMB07N03HS LIMITS ±20 51 46 14 11 110 30 45.0 22.5 56.8 22.7 2.3 1.5 -55 to 150 UNIT V A mJ W W °C M.

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Excelliance MOS
EMB07N03HR
Part Number EMB07N03HR
Manufacturer Excelliance MOS
Title N-Channel Logic Level Enhancement Mode Field Effect Transistor
Description EMB07N03HR N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS 30V RDSON (MAX.) 7mΩ ID 50A G N Chan.
Features e ≤ 1% 350°C / W when mounted on a 1 in2 pad of 2 oz copper. UNIT V A mJ W °C UNIT °C / W 2018/11/11 p.1 EMB07N03HR ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshol.

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