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EMB07N03HS Single N-Channel Logic Level Enhancement Mode Field Effect Transistor Datasheet


EMB07N03HS

Excelliance MOS
EMB07N03HS

Part Number EMB07N03HS
Manufacturer Excelliance MOS
Description N-CH BVDSS 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 7.0mΩ 10.6mΩ ID @TC=25℃ 51.0A ID @TA=25℃ 14.0A Single N Channel MOSFET UIS, R...
Features ient3 RθJA 1Pulse width limited by maximum junction temperature. 2Duty cycle < 1% 355°C / W when mounted on a 1 in2 pad of 2 oz copper. 4Guarantee by Engineering test TYPICAL 2020/8/26 A.1 EMB07N03HS LIMITS ±20 51 46 14 11 110 30 45.0 22.5 56.8 22.7 2.3 1.5 -55 to 150 UNIT V A mJ W W °C M...

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EMB07N03HR

Excelliance MOS
EMB07N03HR
Part Number EMB07N03HR
Manufacturer Excelliance MOS
Title N-Channel Logic Level Enhancement Mode Field Effect Transistor
Description EMB07N03HR N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS 30V RDSON (MAX.) 7mΩ ID 50A G N Chan.
Features e ≤ 1% 350°C / W when mounted on a 1 in2 pad of 2 oz copper. UNIT V A mJ W °C UNIT °C / W 2018/11/11 p.1 EMB07N03HR ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshol.

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