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EMB07B03H Dual P-Channel Logic Level Enhancement Mode Field Effect Transistor Datasheet


EMB07B03H

Excelliance MOS
EMB07B03H

Part Number EMB07B03H
Manufacturer Excelliance MOS
Description Dual P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V RDSON (MAX.) 7.8mΩ ID ‐24A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Volt...
Features ‐25 31 15 25 10 ‐55 to 150 UNIT V A mJ W °C MAXIMUM 5 45 80 UNIT °C / W p.1 EMB07B03H ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = ‐250A VDS = VGS, ID = ‐250A VDS = 0V, VGS = ±20V VDS = ‐24V, VGS = 0V VDS = ‐20V, VGS = 0V, TJ = 125 °C VDS = ‐5V, VGS...

Document Datasheet EMB07B03H datasheet pdf (233.94KB)



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