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EMB07N03VQ |
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| Part Number | EMB07N03VQ |
| Manufacturer | Excelliance MOS |
| Title | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Features |
MAL RESISTANCE RATINGS THERMAL RESISTANCE
Junction-to-Case Junction-to-Ambient3
SYMBOL
RθJC RθJA
TYPICAL
1Pulse width limited by maximum junction temperature. 2Duty cycle < 1％ 355°C / W when mounted on a 1 in2 pad of 2 oz copper. 4Guarantee by Engineering test
MAXIMUM
1.5 55
UNIT °C/W
2020/4/1... |
| Document |
 EMB07N03VQ Data Sheet
PDF 442.47KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | EMB07N03V |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 2 | EMB07N03A |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 3 | EMB07N03HR |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 4 | EMB07N03HS |
Excelliance MOS |
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 5 | EMB07N04A |
Excelliance MOS |
MOSFET |
|
| 6 | EMB07N04H |
Excelliance MOS |
MOSFET |
|
Desde 2024. D4U Semiconductor.
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