BFS482 20mA.) Datasheet, Distribuidor, stock y mejor precio

Part Number	BFS482
Manufacturer	Infineon Technologies AG
Title	NPN Silicon RF Transistor
Description	BFS482 NPN Silicon RF Transistor 4 For low-noise. high-gain broadband amplifiers 5 6 at collector currents from 0.2 mA to 20 mA f T = 8 GHz F = 1.2 dB at 900 MHz Two (galvanic) internal isolated 2 1 C1 6 E2 5 B2 4 3 Transistors in one package VPS05604 TR2 TR1 1 B1 2 E1 3 C2 EHA071.
Features	thJA please refer to Application Note Thermal Resistance 1 Jun-27-2001 BFS482 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain I.

No.	Parte #	Fabricante	Descripción
1	BFS480	Siemens Semiconductor Group	NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)
2	BFS480	Infineon Technologies AG	NPN Silicon RF Transistor
3	BFS481	Siemens Semiconductor Group	NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at collector currents from 0.5 to 12 mA)
4	BFS481	Infineon Technologies AG	Low Noise Silicon Bipolar RF Transistor
5	BFS483	Siemens Semiconductor Group	NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at colector current from 2mA to 28mA)
6	BFS483	Infineon Technologies AG	Low Noise Silicon Bipolar RF Transistor
7	BFS460L6	Infineon Technologies AG	NPN Silicon RF TWIN Transistor
8	BFS466L6	Infineon Technologies AG	NPN Silicon RF TWIN Transistor
9	BFS17	NXP	NPN 1GHz wideband transistor
10	BFS17	Vishay Telefunken	Silicon NPN Planar RF Transistor

BFS482 Datasheet. existencias, precio