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BFS482 |
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| Part Number | BFS482 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | BFS482 NPN Silicon RF Transistor 4 For low-noise. high-gain broadband amplifiers 5 6 at collector currents from 0.2 mA to 20 mA f T = 8 GHz F = 1.2 dB at 900 MHz Two (galvanic) internal isol... |
| Features |
thJA please refer to Application Note Thermal Resistance
1
Jun-27-2001
BFS482
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 10 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit
2
Jun-27-2001
BFS482
Electrical Characteristics at TA = 25°C, unless otherwise... |
| Document |
 BFS482 Data Sheet
PDF 62.16KB |
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