BFS483 28mA) Datasheet, Distribuidor, stock y mejor precio

Part Number	BFS483
Manufacturer	Infineon Technologies AG
Title	Low Noise Silicon Bipolar RF Transistor
Description	Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Two (galvanic) internal isolated Transistor in one package • For orientation in reel see package information below • Pb-free (RoH.
Features	Ptot TJ TA TStg Value 12 20 20 2 65 5 450 150 -65 ... 150 -65 ... 150 Unit V mA mW °C Thermal Resistance Parameter Junction - soldering point2) Symbol RthJS Value 245 Unit K/W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff .

No.	Parte #	Fabricante	Descripción
1	BFS480	Siemens Semiconductor Group	NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)
2	BFS480	Infineon Technologies AG	NPN Silicon RF Transistor
3	BFS481	Siemens Semiconductor Group	NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at collector currents from 0.5 to 12 mA)
4	BFS481	Infineon Technologies AG	Low Noise Silicon Bipolar RF Transistor
5	BFS482	Siemens Semiconductor Group	NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA.)
6	BFS482	Infineon Technologies AG	NPN Silicon RF Transistor
7	BFS460L6	Infineon Technologies AG	NPN Silicon RF TWIN Transistor
8	BFS466L6	Infineon Technologies AG	NPN Silicon RF TWIN Transistor
9	BFS17	NXP	NPN 1GHz wideband transistor
10	BFS17	Vishay Telefunken	Silicon NPN Planar RF Transistor

BFS483 Datasheet. existencias, precio