BFS480 systems) Datasheet, Distribuidor, stock y mejor precio

Part Number	BFS480
Manufacturer	Infineon Technologies AG
Title	NPN Silicon RF Transistor
Description	BFS480 NPN Silicon RF Transistor 4 For low noise, low-power amplifiersin mobile 5 6 communication systems (pager, cordless telephone) at collector currents from 0.2 mA to 8 m f T = 7 GHz F = 1.5 dB at 900 MHz Two (galvanic) internal isolated 2 1 C1 6 E2 5 B2 4 3 VPS05604 Transistors in.
Features	the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jun-27-2001 BFS480 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-b.

No.	Parte #	Fabricante	Descripción
1	BFS481	Siemens Semiconductor Group	NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at collector currents from 0.5 to 12 mA)
2	BFS481	Infineon Technologies AG	Low Noise Silicon Bipolar RF Transistor
3	BFS482	Siemens Semiconductor Group	NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA.)
4	BFS482	Infineon Technologies AG	NPN Silicon RF Transistor
5	BFS483	Siemens Semiconductor Group	NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at colector current from 2mA to 28mA)
6	BFS483	Infineon Technologies AG	Low Noise Silicon Bipolar RF Transistor
7	BFS460L6	Infineon Technologies AG	NPN Silicon RF TWIN Transistor
8	BFS466L6	Infineon Technologies AG	NPN Silicon RF TWIN Transistor
9	BFS17	NXP	NPN 1GHz wideband transistor
10	BFS17	Vishay Telefunken	Silicon NPN Planar RF Transistor

BFS480 Datasheet. existencias, precio