BFS480 |
Part Number | BFS480 |
Manufacturer | Siemens Semiconductor Group |
Description | BFS 480 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA • fT = 7GHz F = 1.5dB at 90... |
Features |
int to the pcb.
Semiconductor Group
1
Dec-16-1996
BFS 480
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
8 100 -
V µA 100 nA 100 µA 1 30 200
IC = 1 mA, IB = 0
Collector-emitter cutoff current
ICES ICBO IEBO hFE
VCE = 10 V, VBE = 0
Collector-base cutoff current
VCB = 8 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 3 mA, VCE = 5 V
Semiconductor Group
2
Dec-16-1996
BFS 480
Electrical Characteristics at TA = 25°C, unless ... |
Document |
BFS480 Data Sheet
PDF 52.25KB |
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