Busque con el número de pieza junto con el fabricante o la descripción
BFS482 |
Click to view a larger image
| Part Number | BFS482 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BFS 482 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA. • fT = 8GHz F = 1.2dB at 900MHz • Two (galvanic) internal isolated Transistor... |
| Features |
6
BFS 482
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
12 100 -
V µA 100 nA 100 µA 1 50 200
IC = 1 mA, IB = 0
Collector-emitter cutoff current
ICES ICBO IEBO hFE
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 10 mA, VCE = 8 V
Semiconductor Group
2
Dec-16-1996
BFS 482
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Ch... |
| Document |
 BFS482 Data Sheet
PDF 53.42KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BFS480 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems) |
|
| 2 | BFS480 |
Infineon Technologies AG |
NPN Silicon RF Transistor |
|
| 3 | BFS481 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at collector currents from 0.5 to 12 mA) |
|
| 4 | BFS481 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|
| 5 | BFS482 |
Infineon Technologies AG |
NPN Silicon RF Transistor |
|
| 6 | BFS483 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at colector current from 2mA to 28mA) |
|
Desde 2024. D4U Semiconductor.
|