BF2030W |
Part Number | BF2030W |
Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
Description | Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BF2030... AGC RF Input RG1 G2 G1 VGG GND Drain RF Output + DC ESD (Electrostatic discharge) sensitive device, observe handling precaution! Class 2 (2000V - 4000V) pi. |
Features | istance Parameter Channel - soldering point1) BF2030/ BF2030R BF2030W Symbol Rthchs BF2030... Value ≤370 ≤280 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source breakdown voltage ID = 20 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, VG2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, VG1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 5 V, VG2S = 0 , VDS = 0 Gate2-source leakage current VG2S = 5 V, VG1S = 0 , VDS = 0 Drain current VDS = 5 V, . |
Datasheet |
BF2030W Data Sheet
PDF 113.50KB |
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BF2030W |
Part Number | BF2030W |
Manufacturer | Siemens Semiconductor Group |
Title | Silicon N-Channel MOSFET Tetrode |
Description | BF 2030W Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code Q62702-F1774 Pin Configuration . |
Features | - Unit V(BR)DS +V(BR)G1SS +V(BR)G2SS +I G1SS +I G2SS 0.3 0.3 V I D = 650 µA, -V G1S = 4 V, - V G2S = 4 V Gate 1 - source breakdown voltage +I G1S = 10 mA, V G2S = 0 V, V DS = 0 V Gate 2 - source breakdown voltage ±I G2S = 10 mA, V G1S = V DS = 0 Gate 1 source current V nA VG1S = 5 V, V G2S = 0 V Gate 2 source leakage current VG2S = 5 V, V G1S = 0 V, V DS = 0 V Drain current I DSS I DSX VG. |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BF2030 |
Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode | |
2 | BF2030 |
Infineon Technologies AG |
Silicon N-Channel MOSFET Tetrode | |
3 | BF2030R |
Infineon Technologies AG |
Silicon N-Channel MOSFET Tetrode | |
4 | BF200 |
ETC |
NPN TRANZYSTORY | |
5 | BF200 |
CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR | |
6 | BF2000 |
Siemens Semiconductor Group |
Silicon N Channel MOSFET Tetrode | |
7 | BF2000W |
Siemens Semiconductor Group |
Silicon N Channel MOSFET Tetrode | |
8 | BF200B |
Bharat |
NPN High Frequency Transistors | |
9 | BF200B |
Advani |
IF / RF Amplifiers and Oscillators | |
10 | BF201M |
LangTuo |
SMD Gas Discharge Tube |