BF201M |
Part Number | BF201M |
Manufacturer | LangTuo |
Description | LangTuo GDT Product Specification BF***M SMD Gas Discharge Tube(5×5×4.2mm) 1、FEATURES Surface Mounting Design UL Certificated E232249 Size Design EIA 2018 5×5×4.2mm High Current Handling Capability 5,000A @ 8/20μs Low Capacitance and Insertion Loss Fast Response and Long Service Life Reliable to Protect Electrostatic Surge Moisture sensitivi. |
Features | Surface Mounting Design UL Certificated E232249 Size Design EIA 2018 5×5×4.2mm High Current Handling Capability 5,000A @ 8/20μs Low Capacitance and Insertion Loss Fast Response and Long Service Life Reliable to Protect Electrostatic Surge Moisture sensitivity level:Level 1 WI-SP-MG-09-B2 2、AVAILABLE PART NUMBER AND ELECTRICAL PARAMETER Part Number DC Breakdown Tolerance Voltage① Impulse Spark-over Voltage Impulse Discharge Current② 100V/s④ of Vs 1kV/μs④ 8/20μs BF071M 70V ±20% ≤ 650V 5,000A BF091M 90V ±20% ≤650V 5,000A BF151M 150V ±20% ≤ 650V 5,000A BF201. |
Datasheet |
BF201M Data Sheet
PDF 228.49KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | BF200 |
ETC |
NPN TRANZYSTORY | |
2 | BF200 |
CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR | |
3 | BF2000 |
Siemens Semiconductor Group |
Silicon N Channel MOSFET Tetrode | |
4 | BF2000W |
Siemens Semiconductor Group |
Silicon N Channel MOSFET Tetrode | |
5 | BF200B |
Bharat |
NPN High Frequency Transistors | |
6 | BF200B |
Advani |
IF / RF Amplifiers and Oscillators | |
7 | BF2030 |
Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode | |
8 | BF2030 |
Infineon Technologies AG |
Silicon N-Channel MOSFET Tetrode | |
9 | BF2030R |
Infineon Technologies AG |
Silicon N-Channel MOSFET Tetrode | |
10 | BF2030W |
Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode |