BF2000W |
Part Number | BF2000W |
Manufacturer | Siemens Semiconductor Group |
Description | BF 2000W Silicon N Channel MOSFET Tetrode Target data sheet • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz 3 4 2 1 VPS05605 Type Marking Ordering Code Q62702-F1772 Pin Configuration 1=D 2=S 3 = G1 4 = G2 Package SOT-343 BF 2000W NDs Maximum Ratings Parameter Drain-source voltage Symbo. |
Features | 1S = 4 V, - V G2S = 4 V Gate 1 source breakdown voltage ±I G1S = 10 mA, VG2S = V DS = 0 Gate 2 source breakdown voltage ±I G2S = 10 mA, VG1S = 0 V, V DS = 0 V Gate 1 source leakage current ±VG1S = 5 V, V G2S = V DS = 0 Gate 2 source leakage current ±VG2S = 5 V, V G1S = 0 V, V DS = 0 V Drain current nA I DSS VG1S(p) VG2S(p) µA V VDS = 5 V, V G1S = 0 , V G2S = 4 V Gate 1-source pinch-off voltage VDS = 5 V, V G2S = 4 V, I D = 200 µA Gate 2-source pinch-off voltage VDS = 5 V, ID = 100 µA Semiconductor Group Semiconductor Group 22 Au 1998-11-01 -17-1998 BF 2000W Electrical Characteristics. |
Datasheet |
BF2000W Data Sheet
PDF 19.63KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | BF2000 |
Siemens Semiconductor Group |
Silicon N Channel MOSFET Tetrode | |
2 | BF200 |
ETC |
NPN TRANZYSTORY | |
3 | BF200 |
CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR | |
4 | BF200B |
Bharat |
NPN High Frequency Transistors | |
5 | BF200B |
Advani |
IF / RF Amplifiers and Oscillators | |
6 | BF201M |
LangTuo |
SMD Gas Discharge Tube | |
7 | BF2030 |
Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode | |
8 | BF2030 |
Infineon Technologies AG |
Silicon N-Channel MOSFET Tetrode | |
9 | BF2030R |
Infineon Technologies AG |
Silicon N-Channel MOSFET Tetrode | |
10 | BF2030W |
Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode |