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BF2030 |
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| Part Number | BF2030 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BF 2030 Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V 3 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution Type BF 2030 Marking Ordering Code NEs Q62702-F1773 Pin Configuration 1=S 2=D 3 = G2 4 = G1 Package SOT-143 Maximum Ra. |
| Features | V(BR)DS +V(BR)G1SS +V(BR)G2SS +I G1SS +I G2SS 0.3 0.3 V I D = 650 µA, -V G1S = 4 V, - V G2S = 4 V Gate 1 - source breakdown voltage +I G1S = 10 mA, V G2S = 0 V, V DS = 0 V Gate 2 - source breakdown voltage ±I G2S = 10 mA, V G1S = V DS = 0 Gate 1 source current V nA VG1S = 6 V, V G2S = 0 V Gate 2 source leakage current VG2S = 8 V, V G1S = 0 V, V DS = 0 V Drain current I DSS I DSX VG2S(p) VG1S(p) µA mA V VDS = 5 V, V G1S = 0 , V G2S = 4.5 V Drain-source current VDS = 5 V, V G2S = 4.5 , RG1 = 20 kΩ Gate 2-source pinch-off voltage VDS = 5 V, ID = 100 µA Gate 1-source pinch-off voltage . |
| Datasheet |
 BF2030 Data Sheet
PDF 16.48KB |
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BF2030 |
| Part Number | BF2030 |
| Manufacturer | Infineon Technologies AG |
| Title | Silicon N-Channel MOSFET Tetrode |
| Description | Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BF2030... AGC RF Input RG1 G2 G1 VGG GND Drain RF Output + DC ESD (Electrostatic discharge) sensitive devi. |
| Features | istance Parameter Channel - soldering point1) BF2030/ BF2030R BF2030W Symbol Rthchs BF2030... Value ≤370 ≤280 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source breakdown voltage ID = 20 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, VG2S = 0 , VDS = 0 Gate2-sour. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BF2030R |
Infineon Technologies AG |
Silicon N-Channel MOSFET Tetrode |
|
| 2 | BF2030W |
Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode |
|
| 3 | BF2030W |
Infineon Technologies AG |
Silicon N-Channel MOSFET Tetrode |
|
| 4 | BF200 |
ETC |
NPN TRANZYSTORY |
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| 5 | BF200 |
CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
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| 6 | BF2000 |
Siemens Semiconductor Group |
Silicon N Channel MOSFET Tetrode |
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| 7 | BF2000W |
Siemens Semiconductor Group |
Silicon N Channel MOSFET Tetrode |
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| 8 | BF200B |
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