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BF2030W |
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| Part Number | BF2030W |
| Manufacturer | Siemens Semiconductor Group |
| Description | BF 2030W Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensiti... |
| Features |
-
Unit
V(BR)DS
+V(BR)G1SS +V(BR)G2SS +I G1SS +I G2SS
0.3 0.3
V
I D = 650 µA, -V G1S = 4 V, - V G2S = 4 V Gate 1 - source breakdown voltage
+I G1S = 10 mA, V G2S = 0 V, V DS = 0 V Gate 2 - source breakdown voltage ±I G2S = 10 mA, V G1S = V DS = 0 Gate 1 source current
V nA
VG1S = 5 V, V G2S = 0 V
Gate 2 source leakage current
VG2S = 5 V, V G1S = 0 V, V DS = 0 V
Drain current
I DSS I DSX VG2S(p) VG1S(p)
µA mA V
VDS = 5 V, V G1S = 0 V, VG2S = 4 V
Drain-source current
VDS = 5 V, V G2S = 4 V, RG1 = 20 kΩ
Gate 2-source pinch-off voltage
VDS = 5 V, ID = 20 µA
Gate 1-source pinch-off volt... |
| Document |
 BF2030W Data Sheet
PDF 16.45KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BF2030 |
Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode |
|
| 2 | BF2030 |
Infineon Technologies AG |
Silicon N-Channel MOSFET Tetrode |
|
| 3 | BF2030R |
Infineon Technologies AG |
Silicon N-Channel MOSFET Tetrode |
|
| 4 | BF2030W |
Infineon Technologies AG |
Silicon N-Channel MOSFET Tetrode |
|
| 5 | BF200 |
ETC |
NPN TRANZYSTORY |
|
| 6 | BF200 |
CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
|
| 7 | BF2000 |
Siemens Semiconductor Group |
Silicon N Channel MOSFET Tetrode |
|
| 8 | BF2000W |
Siemens Semiconductor Group |
Silicon N Channel MOSFET Tetrode |
|
| 9 | BF200B |
Bharat |
NPN High Frequency Transistors |
|
| 10 | BF200B |
Advani |
IF / RF Amplifiers and Oscillators |
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Desde 2024. D4U Semiconductor.
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